 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number:EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features * Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC118 is formed with two chips, being equivalent to the 2SC4577, placed in one package. * Low collector to emitter saturation voltage. * Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC118] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP IB PC PT Tj Tstg 1 unit Conditions Ratings 20 15 5 500 1 100 200 300 150 -55 to+150 Unit V V V mA A mA mW mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE(1) hFE(2) hFE(small/ large) fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) VCB=15V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=2V, IC=400mA VCE=2V, IC=10mA VCE=2V, IC=50mA VCE=10V, f=1MHz IC=5mA. IB=0.5mA IC=200mA. IB=10mA IC=200mA. IB=10mA 20 15 5 160 80 0.8 0.98 300 4 15 160 0.95 30 300 1.2 MHz pF mV mV V V V V Conditions Ratings min typ max 0.1 0.1 560 Unit A A V(BR)CBO IC=10A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10A, IC=0 Note: The specifications shown above are for each individual transistor. Marking:110 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/5129MO, TS No.3116-1/3 FC118 No.3116-2/3 FC118 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3116-3/3 |
Price & Availability of FC118
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |